參數(shù)資料
型號： HYB18T512800AF-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 77/117頁
文件大?。?/td> 2102K
代理商： HYB18T512800AF-3
Data Sheet
77
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
AC & DC Operating Conditions
5
AC & DC Operating Conditions
5.1
Absolute Maximum Ratings
Table 23
Symbol
V
DD
V
DDQ
V
DDL
V
IN
,
V
OUT
T
STG
Absolute Maximum Ratings
Parameter
Voltage on
V
DD
pin relative to
V
SS
Voltage on
V
DDQ
pin relative to
V
SS
Voltage on
V
DDL
pin relative to
V
SS
Voltage on any pin relative to
V
SS
Storage Temperature
Rating
–1.0 to +2.3
–0.5 to +2.3
–0.5 to +2.3
–0.5 to +2.3
–55 to +100
Unit
V
V
V
V
°
C
Note
1)2)
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2)
V
DD
,
V
DDQ
and
V
DDL
must be within 300 mV of each other at all times, and
V
REF
must not be greater than 0.6 x
V
DDQ
.
However when
V
DD
,
V
DDQ
and
V
DDL
are less than 500 mV,
V
REF
may be equal to or less than 300 mV.
3) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
1)2)
1)2)
1)
1)3)
Table 24
Symbol
T
OPER
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
the DRAM case temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C case temperature the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9
μ
s.
4) Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below
85 °C case temperature before initiating self-refresh operation.
DRAM Component Operating Temperature Range
Parameter
Operating Temperature
Rating
0 to 95
Unit
°C
Note
1)2)3)4)
相關(guān)PDF資料
PDF描述
HYB18T512800AF-3.7 512-Mbit DDR2 SDRAM
HYB18T512800AF-3S 512-Mbit DDR2 SDRAM
HYB18T512800AC-37 M39012 MIL RF CONNECTOR
HYB18T512800AC-5 M39012 MIL RF CONNECTOR
HYB18T512800AC DDR2 Registered Memory Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
HYB18T512800BF-3S 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
HYB25D128160AT-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
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