參數(shù)資料
型號： HYB18T512800AF-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 57/117頁
文件大小： 2102K
代理商： HYB18T512800AF-3
Data Sheet
57
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
512-Mbit DDR2 SDRAM
Functional Description
3.21
Burst Interruption
Interruption of a read or write burst is prohibited for
burst length of 4 and only allowed for burst length of 8
under the following conditions:
1. A Read Burst can only be interrupted by another
Read command. Read burst interruption by a Write
or Precharge Command is prohibited.
2. A Write Burst can only be interrupted by another
Write command. Write burst interruption by a Read
or Precharge Command is prohibited.
3. Read burst interrupt must occur exactly two clocks
after the previous Read command. Any other Read
burst interrupt timings are prohibited.
4. Write burst interrupt must occur exactly two clocks
after the previous Write command. Any other Read
burst interrupt timings are prohibited.
5. Read or Write burst interruption is allowed to any
bank inside the DDR2 SDRAM.
6. Read or Write burst with Auto-Precharge enabled is
not allowed to be interrupted.
7. Read burst interruption is allowed by a Read with
Auto-Precharge command.
8. Write burst interruption is allowed by a Write with
Auto-Precharge command.
9. All command timings are referenced to burst length
set in the mode register. They are not referenced to
the actual burst. For example, Minimum Read to
Precharge timing is AL + BL/2 where BL is the burst
length set in the mode register and not the actual
burst (which is shorter because of interrupt).
Minimum Write to Precharge timing is WL + BL/ 2 +
t
WR
, where
t
WR
starts with the rising clock after the
un-interrupted burst end and not from the end of the
actual burst end.
Figure 38
Read Interrupt Timing Example 1
CL = 3, AL = 0, RL = 3, BL = 8
Figure 39
Write Interrupt Timing Example 2
CL = 3, AL = 0, WL = 2, BL = 8
NOP
NOP
NOP
NOP
NOP
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
RBI
DQS,
DQS
READ B
NOP
Dout A0
Dout A1
Dout A2
Dout A3 Dout B0
Dout B1
Dout B2
Dout B3 Dout B4
Dout B5
Dout B6
Dout B7
NOP
CK, CK
NOP
NOP
NOP
NOP
NOP
W RITE A
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
WBI
DQS,
DQS
NOP
Din A0
Din A1
Din A2
Din A3
Din B0
Din B1
Din B2
Din B3
Dout B4
Din B5
Din B6
Din B7
NOP
W RITE B
CK, CK
NOP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
HYB18T512800BF-3S 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
HYB25D128160AT-6 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
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