參數(shù)資料
型號(hào)： HYB18T512400AF-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit DDR2 SDRAM
中文描述： 512兆位DDR2 SDRAM的
文件頁數(shù)： 11/117頁
文件大?。?/td> 2102K
代理商： HYB18T512400AF-3
Data Sheet
11
Rev. 1.3, 2005-01
09112003-SDM9-IQ3P
512-Mbit DDR2 SDRAM
DDR2 SDRAM
HYB18T512400AF
HYB18T512800AF
HYB18T512160AF
1
Overview
This chapter gives an overview of the 512-Mbit DDR2 SDRAM product family and describes its main
characteristics.
1.1
Features
The 512-Mbit DDR2 SDRAM offers the following key features:
1.8 V
±
0.1 V Power Supply
1.8 V
±
0.1 V (SSTL_18) compatible I/O
DRAM organisations with 4, 8 and 16 data
in/outputs
Double Data Rate architecture: two data transfers
per clock cycle, four internal banks for concurrent
operation
CAS Latency: (2), 3, 4 and 5
Burst Length: 4 and 8
Differential clock inputs (CK and CK)
Bi-directional, differential data strobes (DQS and
DQS) are transmitted / received with data. Edge
aligned with read data and center-aligned with write
data.
DLL aligns DQ and DQS transitions with clock
DQS can be disabled for single-ended data strobe
operation
Commands entered on each positive clock edge,
data and data mask are referenced to both edges of
DQS
Data masks (DM) for write data
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver impedance adjustment (OCD) and
On-Die-Termination (ODT) for better signal quality.
Auto-Precharge operation for read and write bursts
Auto-Refresh, Self-Refresh and power saving
Power-Down modes
Average Refresh Period 7.8
μ
s
Full and reduced Strength Data-Output Drivers
1K page size for
×
4 &
×
8, 2K page size for
×
16
Packages:
P-TFBGA-60 for
×
4 &
×
8 components
P-TFBGA-84 for
×
16 components
RoHS Compliant Products
1)
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and
electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the
Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium,
polybrominated biphenyls and polybrominated biphenyl ethers.
Table 1
Product Type Speed Code
Speed Grade
max. Clock Frequency
High Performance DDR667
–3
DDR2–667C 4–4–4
333
333
200
12
12
45
57
–3S
DDR2–667D 5–5–5
333
266
200
15
15
45
60
Unit
—
MHz
MHz
MHz
ns
ns
ns
ns
@CL5
@CL4
@CL3
f
CK5
f
CK4
f
CK3
t
RCD
t
RP
t
RAS
t
RC
min. RAS-CAS-Delay
min. Row Precharge Time
min. Row Active Time
min. Row Cycle Time
相關(guān)PDF資料
PDF描述
HYB18T512400AF-3S 512-Mbit DDR2 SDRAM
HYB18T512800AF-3 512-Mbit DDR2 SDRAM
HYB18T512800AF-3.7 512-Mbit DDR2 SDRAM
HYB18T512800AF-3S 512-Mbit DDR2 SDRAM
HYB18T512800AC-37 M39012 MIL RF CONNECTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
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