
7-54
Specifications HIP5061
Absolute Maximum Ratings
(Note 1)
Thermal Information
DC Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
DC Supply Current, I
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .105mA
DMOS Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 60V
Average DMOS Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
DMOS Source Voltage, V
SOURCE
, TAB . . . . . . . . . . . . -0.1V to 0.1V
DC Supply Voltage, V
G
. . . . . . . . . . . . . . . . . . . .-0.3V to V
DD
+ 0.3V
Compensation Pin Current, I
VC
. . . . . . . . . . . . . . . . . -5mA to 35mA
Voltage at All Other Pins. . . . . . . . . . . . . . . . . . .-0.3V to V
DD
+ 0.3V
Operating Junction Temperature Range. . . . . . . . . . .0
o
C to +105
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2 - 2KV
Single Pulse Avalanche Energy Rating,
μ
s (Note 2) . . . EAS 100mJ
Thermal Resistance
Plastic SIP Package . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Package Power Dissipation at +85
o
C
(Depends Upon Mounting, Heat Sink and Application) . . . . . 10W
Max. Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . +105
o
C
(Controlled By Thermal Shutdown Circuit)
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
o
C
θ
JC
2
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
V
DD
= V
G
=12V, V
C
= 5V, V
FB
= 5.1V, SOURCE = GND = DRAIN = 0V, T
J
= 0
o
C to +105
o
C,
Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DEVICE PARAMETERS
I
DD
Quiescent Supply Current
V
DD
= V
G
= 13.2V, V
C
= 0V,
V
FB
= 4V
6
12
18
mA
I
DD
Operating Supply Current
V
DD
= V
G
= 13.2V, V
C
= 8.5V, V
FB
= 4V
-
24
31
mA
IV
G
Quiescent Current to Gate Driver
V
DD
= V
G
= 13.2V, V
C
= 0V
-
0
10
μ
A
IV
G
Operating Current to Gate Driver
V
C
= 3V
-
1
2
mA
V
DDC
Clamp Voltage
I
DD
= 100mA
13.3
14
15
V
V
REF
Reference Voltage
I
VC
= 0
μ
A, V
C
= V
FB
5.0
5.1
5.2
V
AMPLIFIERS
|I
FB
|
Input Current
V
FB
= V
REF
-
-0.85
0.5
μ
A
g
m
(V
FB
)
V
FB
Transconductance
I
VC
/(V
FB
- V
REF
)
/I
VC
/ = 500
μ
A, Note 3
20
30
43
mS
IV
CMAX
Maximum Source Current
V
FB
= 4.6V
-4
-1.8
-1
mA
IV
CMAX
Maximum Sink Current
V
FB
= 5.6V
1
1.8
4
mA
A
OL
Voltage Gain
/I
VC
/ = 500
μ
A, Note 3
44
50
-
dB
V
CMAX
Short Circuit Recovery Compara-
tor Rising Threshold Voltage
5.4
6.6
8.9
V
V
CHYS
Short Circuit Recovery
Comparator Hysteresis Voltage
0.7
1.1
1.8
V
IVC
OVER
V
C
Over-Voltage Current
V
DD
= V
G
= 10.8V, V
C
= V
CMAX
0
10
25
mA
CLOCK
fq
Internal Clock Frequency
210
250
290
kHz
DMOS TRANSISTOR
r
DS
(ON)
Drain-Source On-State
Resistance
I
DRAIN
= 5A, V
DD
= V
G
= 10.8V
T
J
= +25
o
C
-
0.15
0.22
r
DS
(ON)
Drain-Source On-State
Resistance
I
DRAIN
= 5A, V
DD
= V
G
= 10.8V
T
J
= +105
o
C
-
-
0.33
I
DSS
Drain-Source Leakage Current
V
DRAIN
= 60V
-
0.5
10
μ
A
I
DSH
Average Drain Short Circuit
Current
V
DRAIN
= 5V, Note 4
-
-
5
A
C
DRAIN
DRAIN Capacitance
Note 4
-
200
-
pF