- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52R2569E2 (Hitachi,Ltd.) 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) PDF資料下載
參數(shù)資料
| 型號： | HB52R2569E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| 中文描述： | 2 GB的注冊SDRAM的內(nèi)存（2GB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 6/23頁 |
| 文件大?。?/td> | 207K |
| 代理商： | HB52R2569E2 |
HB52R2569E2-A6B/B6B
6
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
20
SDRAM device attributes:
W
latency
0
0
0
0
0
0
0
1
01
0
21
SDRAM device attributes
0
0
0
1
0
1
1
0
16
Registered
22
SDRAM device attributes:
General
0
0
0
0
1
1
1
0
0E
V
CC
±
10%
23
SDRAM cycle time
(2nd highest
CE
latency)
(-A6B) 10 ns
1
0
1
0
0
0
0
0
A0
CL = 2
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
24
SDRAM access from Clock
(2nd highest
CE
latency)
(-A6B) 6 ns
0
1
1
0
0
0
0
0
60
(-B6B) Undefined
0
0
0
0
0
0
0
0
00
25
SDRAM cycle time
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
26
SDRAM access from Clock
(3rd highest
CE
latency)
Undefined
0
0
0
0
0
0
0
0
00
27
Minimum row precharge time
0
0
0
1
0
1
0
0
14
20 ns
28
Row active to row active min
RE
to
CE
delay min
Minimum
RE
pulse width
0
0
0
1
0
1
0
0
14
20 ns
29
0
0
0
1
0
1
0
0
14
20 ns
30
0
0
1
1
0
0
1
0
32
50 ns
31
Density of each bank on module 0
0
0
0
0
0
0
0
00
2 bank
1G byte*
8
32
Address and command signal
input setup time
0
0
1
0
0
0
0
0
20
2 ns*
3
33
Address and command signal
input hold time
0
0
0
1
0
0
0
0
10
1 ns*
3
34
Data signal input setup time
0
0
1
0
0
0
0
0
20
2 ns*
3
35
Data signal input hold time
0
0
0
1
0
0
0
0
10
1 ns*
3
36 to 61 Superset information
0
0
0
0
0
0
0
0
00
Future use
62
SPD data revision code
0
0
0
1
0
0
1
0
12
Rev. 1.2A
63
Checksum for bytes 0 to 62
(-A6B)
1
0
0
1
1
0
0
0
98
152
(-B6B)
1
0
0
1
0
1
1
0
96
150
64
Manufacturer’s JEDEC ID code
0
0
0
0
0
1
1
1
07
HITACHI
65 to 71 Manufacturer’s JEDEC ID code
0
0
0
0
0
0
0
0
00
72
Manufacturing location
×
×
×
×
×
×
×
×
××
*
4
(ASCII-
8bit code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52R329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
| HB52RD328DC | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
| HB52RF1289E2-75B | x72 SDRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM |
| HB52R329E2-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R649E1U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。