- 您現在的位置：買賣IC網 > PDF目錄370430 > HB52R2569E2 (Hitachi,Ltd.) 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) PDF資料下載
參數資料
| 型號： | HB52R2569E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| 中文描述： | 2 GB的注冊SDRAM的內存（2GB的寄存同步的DRAM內存） |
| 文件頁數： | 15/23頁 |
| 文件大?。?/td> | 207K |
| 代理商： | HB52R2569E2 |
HB52R2569E2-A6B/B6B
15
DC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
HB52R2569E2
-A6B
-B6B
Parameter
Symbol
Min
Max
Min
Max
Unit
Test conditions
Notes
Operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC1
I
CC1
I
CC2P
—
5890
—
—
mA
Burst length = 1
t
RC
= min
1, 2, 3
—
5890
—
5890
mA
Standby current in power
down
—
1606
—
1606
mA
CKE = V
IL
, t
CK
= 12
ns
6
Standby current in power
down (input signal stable)
I
CC2PS
—
1534
—
1534
mA
CKE = V
IL
, t
CK
=
∞
7
Standby current in non
power down
I
CC2N
—
2830
—
2830
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12
ns
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
4
Active standby current in
power down
I
CC3P
—
1678
—
1678
mA
1, 2, 6
Active standby current in
non power down
I
CC3N
—
3550
—
3550
mA
1, 2, 4
Burst operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC4
I
CC4
—
5890
—
—
mA
1, 2, 5
—
5890
—
5890
mA
Refresh current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC5
I
CC5
I
CC6
—
10390
—
—
mA
t
RC
= min
3
—
10390
—
10390
mA
Self refresh current
—
1606
—
1606
mA
V
IH
≥
V
– 0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
8
Input leakage current
I
LI
I
LO
–10
10
–10
10
μ
A
μ
A
Output leakage current
–10
10
–10
10
Output high voltage
V
OH
V
OL
2.4
—
2.4
—
V
I
OH
= –4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
—
0.4
V
相關PDF資料 |
PDF描述 |
|---|---|
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52R329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
| HB52RD328DC | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
| HB52RF1289E2-75B | x72 SDRAM Module |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM |
| HB52R329E2-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R649E1U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。