參數(shù)資料
型號: HB52R2569E2
廠商: Hitachi,Ltd.
英文描述: 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM)
中文描述: 2 GB的注冊SDRAM的內(nèi)存(2GB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 2/23頁
文件大小: 207K
代理商: HB52R2569E2
HB52R2569E2-A6B/B6B
2
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential
Interleave
Programmable
CE
latency: 3/4 (HB52R2569E2-A6B)
: 4 (HB52R2569E2-B6B)
Byte control by DQMB
Refresh cycles: 8192 refresh cycles/64 ms
2 variations of refresh
Auto refresh
Self refresh
Ordering Information
Type No.
Frequency
CE
latency
Package
Contact pad
HB52R2569E2-A6B
100 MHz
3/4
168-pin dual lead out socket type
Gold
HB52R2569E2-B6B
100 MHz
4
Pin Arrangement
1 pin 10 pin11 pin
40 pin 41 pin
84 pin
85 pin 94 pin 95 pin
124 pin 125 pin
168 pin
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