參數(shù)資料
型號(hào): HB52R2569E2
廠商: Hitachi,Ltd.
英文描述: 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM)
中文描述: 2 GB的注冊(cè)SDRAM的內(nèi)存(2GB的寄存同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 5/23頁(yè)
文件大?。?/td> 207K
代理商: HB52R2569E2
HB52R2569E2-A6B/B6B
5
Serial PD Matrix
*
1
Byte No. Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
Number of bytes used by
module manufacturer
1
0
0
0
0
0
0
0
80
128
1
Total SPD memory size
0
0
0
0
1
0
0
0
08
256 byte
2
Memory type
0
0
0
0
0
1
0
0
04
SDRAM
3
Number of row addresses bits
0
0
0
0
1
1
0
1
0D
13
4
Number of column addresses
bits
0
0
0
0
1
1
0
0
0C
12
5
Number of banks
0
0
0
0
0
0
1
0
02
2
6
Module data width
0
1
0
0
1
0
0
0
48
72 bit
7
Module data width (continued)
0
0
0
0
0
0
0
0
00
0 (+)
8
Module interface signal levels
0
0
0
0
0
0
0
1
01
LVTTL
9
SDRAM cycle time
(highest
CE
latency)
10 ns
1
0
1
0
0
0
0
0
A0
CL = 3
10
SDRAM access from Clock
(highest
CE
latency)
6 ns
0
1
1
0
0
0
0
0
60
*
3
11
Module configuration type
0
0
0
0
0
0
1
0
02
ECC
12
Refresh rate/type
1
0
0
0
0
0
1
0
82
Normal
(7.8125
μ
s)
Self refresh
13
SDRAM width
0
0
0
0
0
0
1
0
02
128M
×
2
×
2
14
Error checking SDRAM width
0
0
0
0
0
0
1
0
02
15
SDRAM device attributes:
minimum clock delay for back-to-
back random column addresses
0
0
0
0
0
0
0
1
01
1 CLK
16
SDRAM device attributes:
Burst lengths supported
0
0
0
0
1
1
1
1
0F
1, 2, 4, 8
17
SDRAM device attributes:
number of banks on SDRAM
device
0
0
0
0
0
1
0
0
04
4
18
SDRAM device attributes:
CE
latency
(-A6B)
0
0
0
0
0
1
1
0
06
2/3
(-B6B)
0
0
0
0
0
1
0
0
04
3
19
SDRAM device attributes:
S
latency
0
0
0
0
0
0
0
1
01
0
相關(guān)PDF資料
PDF描述
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