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參數(shù)資料
| 型號(hào)： | HB52R2569E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| 中文描述： | 2 GB的注冊(cè)SDRAM的內(nèi)存（2GB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 17/23頁 |
| 文件大?。?/td> | 207K |
| 代理商： | HB52R2569E2 |
HB52R2569E2-A6B/B6B
17
AC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V) (cont)
HB52R2569E2
-A6B/B6B
Parameter
HITACHI
Symbol
PC100
Symbol
Min
Max
Unit
Notes
CKE hold time
t
CEH
t
CS
t
CH
Thi
3.0
—
ns
1
Command setup time
Tsi
4.1
—
ns
1
Command hold time
Thi
3.0
—
ns
1
Ref/Active to Ref/Active command period t
RC
Active to precharge command period
Trc
70
—
ns
1
t
RAS
t
RCD
Tras
50
120000
ns
1
Active command to column command
(same bank)
Trcd
20
—
ns
1
Precharge to active command period
t
RP
t
DPL
Trp
20
—
ns
1
Write recovery or data-in to precharge
lead time
Tdpl
20
—
ns
1
Active (a) to Active (b) command period
t
RRD
t
T
t
REF
Trrd
20
—
ns
1
Transition time (rise to fall)
1
5
ns
Refresh period
Notes: 1. AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3. t
LZ
(max) defines the time at which the outputs achieves the low impedance state.
4. t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
5. t
CES
defines CKE setup time to CK rising edge except power down exit command.
—
64
ms
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
Ambient illuminance: Under 100 lx
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM |
| HB52R329E2-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R649E1U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM |
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