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參數(shù)資料
| 型號(hào)： | HB52R2569E2 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 2 GB Registered SDRAM DIMM(2GB 寄存同步DRAM DIMM) |
| 中文描述： | 2 GB的注冊(cè)SDRAM的內(nèi)存（2GB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 18/23頁 |
| 文件大?。?/td> | 207K |
| 代理商： | HB52R2569E2 |
HB52R2569E2-A6B/B6B
18
Relationship Between Frequency and Minimum Latency
Parameter
HB52R2569E2
Frequency (MHz)
-A6B/B6B
t
CK
(ns)
Active command to column command (same bank)
HITACHI
Symbol
PC100
Symbol 10
Notes
I
RCD
I
RC
2
1
Active command to active command (same bank)
7
= [I
RAS
+ I
RP
]
1
Active command to precharge command (same bank)
I
RAS
I
RP
I
DPL
5
1
Precharge command to active command (same bank)
2
1
Write recovery or data-in to precharge command
(same bank)
Tdpl
2
1
Active command to active command (different bank)
I
RRD
I
SREX
I
APW
2
1
Self refresh exit time
Tsrx
2
2
Last data in to active command
(Auto precharge, same bank)
Tdal
4
= [I
DPL
+ I
RP
]
Self refresh exit to command input
I
SEC
7
= [I
RC
]
3
Precharge command to high impedance
(
CE
latency = 3)
(
CE
latency = 4)
I
HZP
I
HZP
I
APR
Troh
3
Troh
4
Last data out to active command (auto precharge)
(same bank)
0
Last data out to precharge (early precharge)
(
CE
latency = 3)
(
CE
latency = 4)
I
EP
–2
I
EP
I
CCD
I
WCD
I
DID
I
DOD
I
CLE
I
RSA
I
CDD
I
PEC
I
BSR
–3
Column command to column command
Tccd
1
Write command to data in latency
Tdwd
1
DQMB to data in
Tdqm
1
DQMB to data out
Tdqz
3
CKE to CK disable
Tcke
2
Register set to active command
S
to command disable
Tmrd
1
0
Power down exit to command input
1
Burst stop to output valid data hold
(
CE
latency = 3)
(
CE
latency = 4)
2
I
BSR
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52R329E22 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
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| HB52RD168DB | 128 MB Unbuffered SDRAM S.O.DIMM(128MB 未緩沖同步DRAM DIMM) |
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| HB52RF1289E2-75B | x72 SDRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52R329E22-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R329E22-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM |
| HB52R329E2-B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module |
| HB52R649E1U-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM |
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