參數(shù)資料
型號(hào)： FDMC3300NZA
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
中文描述： 8 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 279K
代理商： FDMC3300NZA
F
FDMC3300NZA RevB
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
10
20
30
40
I
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
PULSE DURATION =300
μ
S
DUTY CYCLE =2.0% MAX
V
GS
= 4.5V
3.5V
3.0V
2.5V
2.0V
Waveforms in
Descending order:
On Region Characteristics
Figure 2.
4
8
12
16
20
24
28
32
36
40
0.8
1.0
1.2
1.4
1.6
1.8
2.0
N
I
D
, DRAIN CURRENT (A)
V
GS
= 2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
-80
-40
T
J
, JUNCTION TEMPERATURE (
°
C)
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
PULSE DURATION =300
μ
S
DUTY CYCLE =2.0% MAX
I
D
= 8A
V
GS
= 4.5V
On Resistance Variation with
Temperature
Figure 4.
0
2
4
6
8
10
0.01
0.02
0.03
0.04
0.05
0.06
I
D
=4A
PULSE DURATION=300
μ
s
DUTY CYCLE=2.0% MAX
T
J
= 25
°
C
T
J
= 125
°
C
R
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
10
20
30
40
PULSE DURATION=300
μ
s
DUTY CYCLE=2.0% MAX
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
V
DS
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-4
1E-3
0.01
0.1
1
10
100
T
J
=-55
°
C
T
J
=25
°
C
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE(V)
T
J
=125
°
C
V
GS
=0V
Body Diode Forward Voltage Variation
With Source Current and Temperature
相關(guān)PDF資料
PDF描述
FDMC5614P P-Channel PowerTrench MOSFET
FDMC6890NZ 30V N-Channel PowerTrench MOSFET
FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC3300NZA_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3612 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F125 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F126 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*