參數(shù)資料
型號(hào): FDMC6890NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 4 A, 20 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MLP3X3, 6 PIN
文件頁數(shù): 1/11頁
文件大?。?/td> 464K
代理商: FDMC6890NZ
tm
October 2006
F
M
2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
www.fairchildsemi.com
1
FDMC6890NZ
Dual N-Channel PowerTrench
MOSFET
20V, 4A, Q1:68m
,
Q2:100m
Features
Q1: N-Channel
Max r
DS(on)
= 68m
at V
GS
= 4.5V, I
D
= 4A
Max r
DS(on)
= 100m
at V
GS
= 2.5V, I
D
= 3A
Q2: N-Channel
Max r
DS(on)
= 100m
at V
GS
= 4.5V, I
D
= 4A
Max r
DS(on)
= 150m
at V
GS
= 2.5V, I
D
= 2A
Low gate Charge
RoHS Compliant
General Description
FDMC6890NZ is a compact single package solution for DC to
DC converters with excellent thermal and switching
characteristics. Inside the Power 33 package features two
N-channel MOSFETs with low on-state resistance and low gate
charge to maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Application
DC - DC Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Q1
20
±12
Q2
20
±12
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Power Dissipation (Steady State) Q1 (Note 1a)
Power Dissipation (Steady State) Q2
Operating and Storage Junction Temperature Range
I
D
4
10
1.92
1.78
A
P
D
W
T
J
, T
STG
-55 to +150
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient Q1 (Note 1a)
65
°C/W
Thermal Resistance, Junction to Ambient Q2
70
Device Marking
6890N
Device
FDMC6890NZ
Package
Power 33
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
S1
G1 D1/S2 G2
D1/S2 D2
S1 D1/S2 D2
G1
G2
Up
Bottom
D1/S2
D1
D2
5
1
6
2
3
4
G2
D2
D1/S2
S1
G1
D1/S2
Power 33
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