參數(shù)資料
型號(hào)： FDMC3300NZA
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
中文描述： 8 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 279K
代理商： FDMC3300NZA
F
FDMC3300NZA RevB
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
B
VDSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
V
GS
= 0V , I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
DS
= 16V, V
GS
= 0V,
V
GS
=
±
12V, V
DS
= 0V
20
-
-
V
-
12.0
-
mV/°C
-
-
-
-
1
μ
A
μ
A
±
10
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 4.5V, I
D
= 8A
V
GS
= 2.5V, I
D
= 7A
V
GS
= 4.5V, I
D
= 8A,
T
J
=150°C
V
DS
= 5V, I
D
=8 A
0.6
-
1.5
V
-
-3.1
-
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
-
20
25
26
34
m
-
29
38
g
FS
Forward Transconductance
-
29
-
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
=0V,
f = 1.0MHz
-
-
-
-
610
165
115
1.7
-
-
-
-
pF
pF
pF
f = 1.0MHz
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
-
-
-
-
-
-
-
8
8
16
16
34
18
-
-
-
ns
ns
ns
ns
nC
nC
nC
19
9
8
1
2
V
DS
= 10V, I
D
= 8A,
V
GS
= 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0V, I
S
= 2A (Note 2)
I
F
= 8A,
dI
F
/dt=100A/
μ
s
-
-
-
0.7
-
-
1.2
21
6
V
ns
nC
Notes:
1.
R
is determined with the device mounted on a 1in
2
oz.copper pad on a 1.5x1.5 in board of FR-4 material .R
θ
JC
are guaranteed by design
while R
θ
JA
is determined by the user’s board design.
a. 52
°C/W when mounted on
a 1 in
2
pad of 2 oz
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
b. 108
°C/W when mounted on
a minimum pad of 2 oz copper
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC3300NZA_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3612 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F125 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F126 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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