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參數(shù)資料
| 型號： | FDMC8878 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm |
| 中文描述： | 9.6 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MLP, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 413K |
| 代理商： | FDMC8878 |
tm
Febr
uary 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMC8878 Rev.
D
www.fairchildsemi.com
1
FDMC8878
N-Channel Power Trench
MOSFET
30V, 16.5A, 14m
Features
Max r
DS(on)
= 14m
at V
GS
= 10V, I
D
= 9.6A
Max r
DS(on)
= 17m
at V
GS
= 4.5V, I
D
= 8.7A
Low Profile - 1mm max in Power 33
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
16.5
38
9.6
60
31
2.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
4
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
60
Device Marking
FDMC8878
Device
FDMC8878
Package
Power 33
7
”
8
m
m 3
000 units
Reel Size
Tape Width
Quantity
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
Power 33
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC8878 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD MLP |
| FDMC8878_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 30V, 16.5A, 14m |
| FDMC8878_F126 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC8878_F127 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC8878_NBSE003 | 功能描述:MOSFET 30V N-CH PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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