參數(shù)資料
型號(hào)： FDMC3300NZA
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
中文描述： 8 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 279K
代理商： FDMC3300NZA
December 2005
F
2005 Fairchild Semiconductor Corporation
FDMC3300NZA Rev B
www.fairchildsemi.com
1
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
8A,20V,26m
General Description
This Dual N-Channel MOSFET has been designed using
Fair
child
Semiconductor’s advanced Power Trench process
to
optimize the R
DS
(on)@V
GS
=2.5v on
special MicroFET
leadframe with all the drains on one side of the package.
Applications
Li-lon Battery Pack
Features
R
DS(ON)
= 26m
@ V
GS
= 4.5 V, I
D
= 8A
R
DS(ON)
= 34m
@ V
GS
= 2.5 V, I
D
= 7A
>2000V ESD protection
Low Profile-1mm maxium-in the new package MicroFET
3.3x3.3 mm
Pb-free and RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
20
±
12
8
40
2.4
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power dissipation (Steady State) (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
T
J
, T
STG
W
o
C
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
Thermal Resistance, Junction-to-Case (Note 1)
52
108
5
o
C/W
Device Marking
3300A
Device
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
FDMC3300NZA
D1
D2
D2
D1
S1
G1
S2
G2
5
4
6
3
7
2
8
1
L
E
A
D
F
R
E
E
M
N
T
A
L
T
I
O
N
MP
I
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC3300NZA_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3612 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F125 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ_F126 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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