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參數(shù)資料
| 型號： | FDMC5614P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel PowerTrench MOSFET |
| 中文描述： | 5.7 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 299K |
| 代理商： | FDMC5614P |
March 2006
F
2006 Fairchild Semiconductor Corporation
FDMC5614P Rev. B
www.fairchildsemi.com
1
FDMC5614P
P-Channel PowerTrench
MOSFET
60V, 5.7A, 100m
General Description Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced Power Trench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V-20V).
Applications
Power management
Load switch
battery protection
Max r
DS(on)
= 100 m
@ V
GS
= -10 V,I
D
= -5.7A
Max r
DS(on)
= 135 m
@ V
GS
= -4.5 V,I
D
= -4.4A
Low gate charge
Fast switching speed
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current -Continuous
(Note 1a)
-Pulsed
Thermal Characteristics
Package Marking and Ordering Information
Parameter
Ratings
-60
±
20
-5.7
-23
6.0
1.2
-55 to +150
Units
V
V
I
D
A
P
D
Power Dissipation (Steady State) (Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
W
T
J
, T
STG
°C
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
Thermal Resistance, Junction-to-Case (Note 1)
52
108
5
°C/W
Device Marking
5614P
Device
FDMC5614P
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
8
1
7
2
3
4
Top
6
5
MicroFET 3x3
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC612PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 20V 8-MLP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET -20V P-Channel PowerTrench MOSFET |
| FDMC6296 | 功能描述:MOSFET 30V Sngl NCh Lgc Lvl PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC6675BZ | 功能描述:MOSFET -30V 20A P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC6675BZ_F125 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC6675BZ_F126 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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