參數(shù)資料
型號: FDMC8854
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
中文描述: 15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 33, 8 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 207K
代理商: FDMC8854
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMC8854 Rev.C
www.fairchildsemi.com
1
FDMC8854
N-Channel Power Trench
MOSFET
30V, 15A, 5.7m
Features
Max r
DS(on)
= 5.7m
at V
GS
= 10V, I
D
= 15A
Max r
DS(on)
= 7.6m
at V
GS
= 4.5V, I
D
= 13A
Low Profile - 1mm max in Power 33
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
15
67
15
30
41
2.0
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
3
60
°C/W
Device Marking
FDMC8854
Device
FDMC8854
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
Power 33
4
3
2
1
5
6
7
8
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