參數(shù)資料
型號(hào)： FDMC8554
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
中文描述： 16.5 A, 20 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER 33, MICROFET-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 198K
代理商： FDMC8554
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMC8554 Rev.C
www.fairchildsemi.com
1
FDMC8554
N-Channel Power Trench
MOSFET
20V, 16.5A, 5m
Features
Max r
DS(on)
= 5m
at V
GS
= 10V, I
D
= 16.5A
Max r
DS(on)
= 6.4m
at V
GS
= 4.5V, I
D
= 14A
Low Profile - 1mm max in a MicroFET 3.3x3.3 mm
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low
rdson
.
Application
Synchronous rectifier
O
Ri
ng FET
POL rectifier
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
20
±20
16.5
72
16.5
36
41
2.0
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
3
°C/W
60
Device Marking
FDMC8554
Device
FDMC8554
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Power 33
S
S
D
D
D
G
S
D
1
2
3
4
5
6
7
8
Bottom
Top
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
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