- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375776 > FDMC2523P_07 (Fairchild Semiconductor Corporation) P-Channel QFET -150V, -3A, 1.5ヘ PDF資料下載
參數(shù)資料
| 型號： | FDMC2523P_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ヘ |
| 中文描述： | P通道QFET - 150伏，三號甲，1.5ヘ |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 177K |
| 代理商： | FDMC2523P_07 |
F
FDMC2523P Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=
-8V
V
GS
=
-9V
V
GS
=
-6V
V
GS
=
-7V
V
GS
=
-10V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.8
1.0
1.2
1.4
1.6
V
GS
= -9V
V
GS
= -8V
V
GS
= -10V
V
GS
= -7V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= -6V
-I
D
, DRAIN CURRENT(A)
N
D
-50
-25
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
1.8
2.1
I
D
= -3A
V
GS
= -10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
5
6
7
8
9
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -0.75A
r
D
,
S
(
Ω
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DD
= -5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0
0.5
1.0
1.5
2.0
2.5
1E-4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMC2523P | P-Channel QFET -150V, -3A, 1.5ohm |
| FDMC2610_07 | N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610 | N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) |
| FDMC2674_07 | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| FDMC2674 | N-Channel UltraFET Trench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC2610 | 功能描述:MOSFET 200V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2610_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET 200V, 9.5A, 200m?? |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。