參數(shù)資料
型號: FDMC2674
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET
中文描述: 1 A, 220 V, 0.366 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 3.30 X 3.30 MM, ROHS COMPLIANT, MLP-8
文件頁數(shù): 1/6頁
文件大小: 303K
代理商: FDMC2674
tm
May 2006
F
2006 Fairchild Semiconductor Corporation
FDMC2674 Rev. E
www.fairchildsemi.com
1
FDMC2674
N-Channel UltraFET Trench
MOSFET
220V, 1A, 366m
Features
Max r
DS(on)
= 366m
at V
GS
= 10V, I
D
= 1A
Typ Q
g
= 12.7nC at V
GS
= 10V
Low Miller charge
Low Q
rr
Body Diode
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Re-
petitive Pulse)
RoHS Compliant
General Description
UltraFET
device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures
1
8
2
7
3
6
4
5
Top
MLP 3.3x3.3
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
220
±20
1
13.8
13
2.4
-55 to 150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation for Single Operation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JA
R
θ
JA
Thermal Resistance , Junction to Ambient (Note 1a)
52
°
C/W
°
C/W
Thermal Resistance , Junction to Ambient (Note 1b)
108
Device Marking
FDMC2674
Device
FDMC2674
Package
MLP 3.3 x 3.3
Reel Size
7’’
Tape Width
12mm
Quantity
3000 units
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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