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參數(shù)資料
| 型號： | FDMC2610 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) |
| 中文描述： | 2.2 A, 200 V, 0.397 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MLP3.3X3.3, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDMC2610 |
tm
September 2006
F
M
2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.
B
www.fairchildsemi.com
1
FDMC2610
N-Channel UltraFET Trench
MOSFET
200V, 9.5A, 200m
Features
Max r
DS(on)
= 200m
at V
GS
= 10V, I
D
= 2.2A
Max r
DS(on)
= 215m
at V
GS
= 6V, I
D
= 1.5A
Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
Units
V
V
Drain to Source Voltage -Continuous (Silicon limited)
Gate to Source Voltage
Drain Current -Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
3
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
60
Device Marking
FDMC2610
Device
FDMC2610
Package
MLP3.3X3.3
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
4
3
2
1
5
6
7
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2610_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET 200V, 9.5A, 200m?? |
| FDMC2674 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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