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參數(shù)資料
| 型號： | FDMC2523P_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ヘ |
| 中文描述： | P通道QFET - 150伏，三號甲，1.5ヘ |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 177K |
| 代理商： | FDMC2523P_07 |
tm
January 2007
F
2006 Fairchild Semiconductor Corporation
FDMC2523P Rev.C
www.fairchildsemi.com
1
FDMC2523P
P-Channel QFET
-150V, -3A, 1.5
Ω
Features
Max r
DS(on)
= 1.5
Ω
at V
GS
= -10V, I
D
= -1.5A
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS Compliant
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
Application
Active Clamp Switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-150
±30
-3
-1.8
-12
42
-55 to +150
300
-5
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous T
C
= 25°C
-Continuous T
C
= 100°C
-Pulsed
Power Dissipation (Steady State) T
C
= 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt (Note 2)
I
D
A
P
D
T
J
, T
STG
T
L
dv/dt
W
°
C
°
C
V/ns
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
3.0
60
°C/W
Device Marking
FDMC2523P
Device
FDMC2523P
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Power 33
S
S
S
G
D
D
D
D
8
1
7
2
3
4
6
5
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
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|---|---|
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