參數(shù)資料
型號： FDMC2674_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
中文描述： N溝道UltraFET溝道MOSFET 220，7.0A，三六六米ヘ
文件頁數(shù)： 1/7頁
文件大小： 198K
代理商： FDMC2674_07
tm
January 2007
F
M
2006 Fairchild Semiconductor Corporation
FDMC2674 Rev.F
www.fairchildsemi.com
1
FDMC2674
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366m
Ω
Features
Max r
DS(on)
= 366m
Ω
at V
GS
= 10V, I
D
= 1.0A
Typ Q
g
= 12.7nC at V
GS
= 10V
Low Miller charge
Low Q
rr
Body Diode
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse)
RoHS Compliant
General Description
UltraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
device
combines
characteristics
that
enable
Application
DC/DC converters and Off-Line UPS
Distributed Power Architectures
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
220
±20
7.0
1.0
13.8
42
2.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1b)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
3.0
60
°C/W
Device Marking
FDMC2674
Device
FDMC2674
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Power 33
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
相關(guān)PDF資料
PDF描述
FDMC2674 N-Channel UltraFET Trench MOSFET
FDMC3300NZA_07 Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
FDMC5614P P-Channel PowerTrench MOSFET
FDMC6890NZ 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC3020DC 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC3300NZA 功能描述:MOSFET 20V 8A 26 OHM MONOLITHIC COMM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC3300NZA_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3612 功能描述:MOSFET 100V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC4435BZ 功能描述:MOSFET -30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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