參數(shù)資料
型號(hào)： FDMC2610_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ
中文描述： N溝道UltraFET海溝㈢MOSFET的為200V，9.5A，200米ヘ
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 347K
代理商： FDMC2610_07
tm
January 2007
F
M
2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.C
www.fairchildsemi.com
1
FDMC2610
N-Channel UltraFET Trench
MOSFET
200V, 9.5A, 200m
Ω
Features
Max r
DS(on)
= 200m
Ω
at V
GS
= 10V, I
D
= 2.2A
Max r
DS(on)
= 215m
Ω
at V
GS
= 6V, I
D
= 1.5A
Low Profile - 1mm max in a Power 33
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
3
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
60
Device Marking
FDMC2610
Device
FDMC2610
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
Power 33
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
相關(guān)PDF資料
PDF描述
FDMC2610 N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm)
FDMC2674_07 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
FDMC2674 N-Channel UltraFET Trench MOSFET
FDMC3300NZA_07 Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC2674 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC2674 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDMC2674_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
FDMC2674_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m??
FDMC3020DC 功能描述:MOSFET 30V NChan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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