參數(shù)資料
型號: FDMC2523P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel QFET -150V, -3A, 1.5ohm
中文描述: 3 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: 3.30 X 3.30 MM, ROHS COMPLIANT PACKAGE-8
文件頁數(shù): 1/7頁
文件大小: 181K
代理商: FDMC2523P
tm
F
2006 Fairchild Semiconductor Corporation
FDMC2523P Rev. B
1
www.fairchildsemi.com
1
FDMC2523P
P-Channel QFET
-150V, -3A, 1.5
:
Features
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS compliant
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced technology
has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications
such as audio amplifier, high efficiency switching DC/DC
converters, and DC motor control.
Application
Active Clamp Switch
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-150
Units
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Tc=25
°
C)
- Continuous (Tc=100
°
C)
±30
V
I
D
-3
A
-1.8
- Pulsed
-12
P
D
T
J
, T
STG
Power Dissipation (Steady State)
25
W
°
C
Operating and Storage Temperature
-55 to +150
T
L
Maximum lead temperature for soldering purposes, 1/8” from case for
5 seconds
300
°
C
dv/dt
Peak Diode Recovery dv/dt (Note 2)
-5
V/ns
R
T
JC
R
T
JA
R
T
JA
Thermal Resistance, Junction to Case (Note 1)
5
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
52
°C/W
Thermal Resistance, Junction to Ambient (Note 1b)
108
°C/W
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
3
000 units
FDMC2523P
FDMC2523P
MLP 3.3X3.3
7"
8
1
7
2
3
4
Top
6
5
MLP 3.3x3.3
Bottom
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
September 2006
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