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參數(shù)資料
| 型號： | FDMB668P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm |
| 中文描述： | 6.1 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 436K |
| 代理商： | FDMB668P |
F
M
FDMB668P Rev.B
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
V
DD
= -10V
V
DD
= -15V
-
G
,
Q
g
, GATE CHARGE(nC)
Gate Charge Characteristics
V
DD
= -5V
ID = -6.1A
Figure 8.
0.1
1
10
100
1000
5000
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
C
rss
C
oss
C
iss
20
Figure 9.
0.01
0.1
1
10
100
0.01
0.1
1
10
20
1ms
1s
DC
10s
100ms
10ms
r
DS(on)
LIMITED
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA = 165
o
C/W
T
A
= 25
o
C
-
D
,
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Figure 10.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0
30
60
90
R
θ
JA
= 165
o
C/W
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
Single Pulse Maximum
Power Dissipation
Figure 11.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION (s)
Transient Thermal Response Curve
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
EAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
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