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參數(shù)資料
| 型號： | FDMB668P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm |
| 中文描述： | 6.1 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 436K |
| 代理商： | FDMB668P |
F
M
FDMB668P Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
8
16
24
32
40
V
GS
= -1.8V
V
GS
= -3.0V
V
GS
= -2.5V
V
GS
= -1.5V
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
8
16
24
32
40
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -4.5V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
= -3.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -6.1A
V
GS
= -4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
1
2
3
4
5
20
25
30
35
40
45
50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
=-6.1A
r
D
,
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
VDD = -5V
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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