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參數(shù)資料
| 型號： | FDMB668P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm |
| 中文描述： | 6.1 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 436K |
| 代理商： | FDMB668P |
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMB668P Rev.B
www.fairchildsemi.com
1
FDMB668P
P-Channel 1.8V Logic Level PowerTrench
MOSFET
-20V, -6.1A, 35m
Features
Max r
DS(on)
=
35m
at V
GS
= -4.5V, I
D
= -6.1A
Max r
DS(on)
=
50m
at V
GS
= -2.5V, I
D
= -5.1A
Max r
DS(on)
=
70m
at V
GS
= -1.8V, I
D
= -4.3A
Excellent for portable application at V
GS
= -1.8V
Thin profile - Maximum height = 0.8mm
RoHS compliant
General Description
FDMB668P is excellent for load switch and DC-DC conversion
among portable electronics. It achieves an optimal balance
among efficiency, thermal transfer and small form by integrating
a P-channel MOSFET with minimized on-state resistance into a
MicroFET 3x1.9 package. When optimizing the dimension of
portable applications, this little device offers a very efficient
solution.
Applications
Load Switch in:
-HDD
-Portable Gaming, MP3
-Notebook
DC/DC Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-20
±8
-6.1
-40
1.9
0.8
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1a)
65
°
C/W
Thermal Resistance, Junction to Ambient (Note 1b)
165
Device Marking
668
Device
FDMB668P
Package
MicroFET 3X1.9
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
MicroFET 3X1.9
PIN 1
GATE
SOURCE
8
7
6
5
1
2
3
4
D
D
D
S
D
D
D
G
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