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參數(shù)資料
| 型號(hào)： | FDMB506P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Logic Level PowerTrench MOSFET |
| 中文描述： | 6.8 A, 20 V, 30 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 1.90 MM, ROHS COMPLIANT, MICROFET-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 218K |
| 代理商： | FDMB506P |
FDMB506P Rev C1(W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -6.8A
V
DS
= -5V
-10V
-15V
0
400
800
1200
1600
2000
2400
2800
3200
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 160
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 160°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 160
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 9. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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| FDMC0205 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC0222 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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