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參數(shù)資料
| 型號： | FDMB506P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Logic Level PowerTrench MOSFET |
| 中文描述： | 6.8 A, 20 V, 30 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 1.90 MM, ROHS COMPLIANT, MICROFET-8 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 218K |
| 代理商： | FDMB506P |
FDMB506P Rev C1(W)
Typical Characteristics
0
10
20
30
40
50
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=-4.5V
-3.5V
-3.0V
-1.8V
-2.5V
-2.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-1.8V
-3.0V
-3.5V
-4.5V
-2.5V
-2.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -6.8A
V
GS
= -4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -3.4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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