參數(shù)資料
型號: FDMB506P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 1.8V Logic Level PowerTrench MOSFET
中文描述: 6.8 A, 20 V, 30 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: 3 X 1.90 MM, ROHS COMPLIANT, MICROFET-8
文件頁數(shù): 1/6頁
文件大小: 218K
代理商: FDMB506P
December 2005
2005 Fairchild Semiconductor Corporation
FDMB506P Rev C1(W)
FDMB506P
P-Channel 1.8V Logic Level PowerTrench
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
Load switch
DC/DC Conversion
Features
–6.8 A, –20V. R
DS(ON)
= 30 m
@ V
GS
= –4.5V
R
DS(ON)
= 38 m
@ V
GS
= –2.5V
R
DS(ON)
= 70 m
@ V
GS
= –1.8V
Low profile – 0.8 mm maximum
Fast switching
RoHS compliant
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
–20
±
8
–6.8
70
1.9
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
65
208
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
506
FDMB506P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET
3x1.9
GATE
SOURCE
4
3
2
1
5
6
7
8
G
D
D
D
S
D
D
D
PIN 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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