- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375776 > FDMB3800N_0610 (Fairchild Semiconductor Corporation) Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A, 40mз PDF資料下載
參數(shù)資料
| 型號(hào)： | FDMB3800N_0610 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A, 40mз |
| 中文描述： | 雙N溝道PowerTrench MOSFET的30V的㈢，4.8A，40mз |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | FDMB3800N_0610 |
F
M
FDMB3800N Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
24
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V,
V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
T
J
= 55°C
10
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.9
3
V
I
D
= 250
μ
A, referenced to 25°C
-4
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4.3A
V
GS
= 10V, I
D
= 4.8A, T
J
= 125°C
V
DS
= 5V, I
D
= 4.8A
32
41
43
14
40
51
61
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=15V, V
GS
= 0V,
f = 1MHz
350
90
40
3
465
120
60
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 1A
V
GS
= 10V, R
GEN
= 6
8
5
16
10
34
10
5.6
ns
ns
ns
ns
nC
nC
nC
21
2
4
1.0
1.5
V
GS
= 0V to 5V V
DD
= 15V
I
D
= 7.5A
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain - Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.25
1.2
A
V
ns
nC
V
GS
= 0V, I
S
= 1.25A (Note 2)
0.8
17
7
I
F
= 4.8A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 80°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 165°C/W when mounted on a
minimum pad of 2 oz copper
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMB3800N | 30V N-Channel PowerTrench MOSFET |
| FDMB506P | P-Channel 1.8V Logic Level PowerTrench MOSFET |
| FDMB668P | P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm |
| FDMC2523P_07 | P-Channel QFET -150V, -3A, 1.5ヘ |
| FDMC2523P | P-Channel QFET -150V, -3A, 1.5ohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMB3900AN | 功能描述:MOSFET 25V Dual N-Chanenl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMB506P | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMB668P | 功能描述:MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC0205 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC0222 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。