參數(shù)資料
型號(hào)： FDMB3800N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 4800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 286K
代理商： FDMB3800N
January 2006
F
2006 Fairchild Semiconductor Corporation
FDMB3800N Rev. C
www.fairchildsemi.com
1
FDMB3800N
Dual N-Channel PowerTrench
MOSFET
4.8A, 30V, 40m
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Features
R
DS(ON)
= 40 m
@ V
GS
= 10 V
R
DS(ON)
= 51 m
@ V
GS
= 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability.
RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
30
±
20
4.8
9
1.6
0.75
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
I
D
A
P
D
Power dissipation for Single Operation (Note 1a)
Power dissipation for Single Operation (Note 1b)
Operating and Storage Junction Temperature Range
W
T
J
, T
STG
°C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
80
165
°C/W
Device Marking
3800
Device
FDMB3800N
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
8
1
7
2
3
4
GATE
SOURCE
6
5
Q1
Q2
L
E
A
D
F
R
E
E
M
E
N
T
A
L
T
I
O
N
MP
I
相關(guān)PDF資料
PDF描述
FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB668P P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm
FDMC2523P_07 P-Channel QFET -150V, -3A, 1.5ヘ
FDMC2523P P-Channel QFET -150V, -3A, 1.5ohm
FDMC2610_07 N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMB3800N_0610 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A, 40mз
FDMB3800N_12 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench?? MOSFET 30V, 4.8A, 40m
FDMB3900AN 功能描述:MOSFET 25V Dual N-Chanenl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMB506P 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMB668P 功能描述:MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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