參數(shù)資料
型號: EDX5116ABSE-3C-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits XDR DRAM (32M words ?16 bits)
中文描述: 32M X 16 RAMBUS, PBGA104
封裝: LEAD FREE, FBGA-104
文件頁數(shù): 19/78頁
文件大?。?/td> 3611K
代理商: EDX5116ABSE-3C-E
Preliminary Data Sheet E0643E30 (Ver. 3.0)
19
EDX5116ABSE
Figure 7
ACT-, RD, WR-, PRE -to-PRE Packet Interac tions
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CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
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CFMN
DQ15..0
DQN15..0
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8
a: ROWA Packet with ACT,Ba,Ra
b: ROWP Packet with PRE,Bb
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CFM
CFMN
RQ11..0
DQ15..0
DQN15..0
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CFMN
DQN15..0
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8
APd Case (activate-precharge different bank)
APs Case (activate-precharge same bank)
a: ROWA Packet with ACT,Ba,Ra
b: ROWP Packet with PRR,Bb
RPd Case (read-precharge different bank)
a: COL Packet with RD,Ba,Ca
b: ROWP Packet with PRE,Bb
RPs Case (read-precharge same bank)
a: COL Packet with RD,Ba,Ca
b: ROWP Packet with PRR,Bb
WPd Case (write-precharge different bank)
a: COL Packet with WR,Ba,Ca
b: ROWP Packet with PRE,Bb
WPs Case (write-precharge same bank)
a: COL Packet with WR,Ba,Ca
b: ROWP Packet with PRE,Bb
PPd Case (precharge-precharge different bank)
a: ROWP Packet with PRE,Ba
b: ROWP Packet with PRE,Bb
PPs Case (precharge-precharge same bank)
a: ROWP Packet with PRE,Ba
b: ROWP Packet with PRE,Bb
Ba # Bb
Ba = Bb
Ba # Bb
Ba = Bb
Ba # Bb
Ba = Bb
Ba # Bb
Ba = Bb
No limit
a
WR
b
PRE
No limit
a
RD
b
PRE
t
RC
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RP
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RAS
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PRE
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PRE
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ACT
No limit
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ACT
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PRE
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PP
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PRE
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PRE
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RAS
b
PRE
a
ACT
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RDP
b
PRE
a
RD
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WRP
b
PRE
a
WR
CFM
RQ11..0
DQ15..0
CFM
RQ11..0
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