參數(shù)資料
型號(hào): EDS2532EEBH-9A
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM (8M words x 32 bits)
中文描述: 256M位的SDRAM(800萬字× 32位)
文件頁數(shù): 6/50頁
文件大?。?/td> 718K
代理商: EDS2532EEBH-9A
EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
6
DC Characteristics 2 (TA = 0
°
C to +70
°
C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–1
1
μA
0
VIN
VDD
Output leakage current
ILO
–1.5
1.5
μA
0
VOUT
VDD, DQ = disable
Output high voltage
VOH
VDD –0.2
V
IOH = –0.1 mA
1
Output low voltage
VOL
0.2
V
IOL = 0.1 mA
1
Note: 1. Driver strength is Half condition.
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol
Pins
min.
typ.
max.
Unit
Notes
Input capacitance
CI1
CLK
2.0
3.5
pF
1, 2, 4
CI2
Address, CKE, /CS,
/RAS, /CAS, /WE,
DQM
2.0
3.5
pF
1, 2, 4
Data input/output
capacitance
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 0.5
×
VDDQ, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
CI/O
DQ
3.0
5.5
pF
1, 2, 3, 4
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