參數(shù)資料
型號(hào)： EDS2532EEBH-9A
廠商： Elpida Memory, Inc.
英文描述： 256M bits SDRAM (8M words x 32 bits)
中文描述： 256M位的SDRAM（800萬(wàn)字× 32位）
文件頁(yè)數(shù)： 32/50頁(yè)
文件大?。?/td> 718K
代理商： EDS2532EEBH-9A
EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
32
Read command to Write command interval
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same
bank as the preceding read command, the write command can be performed after an interval of no less than 1
clock. However, DQM must be set High so that the output buffer becomes High-Z before data input.
CLK
Command
DQ (output)
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
DQ (input)
CL=2
CL=3
DQM
BL = 4
Burst write
READ to WRITE Command Interval (1)
CLK
Command
DQ
READ
WRIT
CL=2
CL=3
DQM
2 clock
out
out
out
out
out
in
in
in
in
in
in
in
in
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two commands with a precharge command and a bank active
command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1
cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the
output buffer becomes High-Z before data input.
相關(guān)PDF資料
PDF描述
EDS2532EEBH-9A-E 256M bits SDRAM (8M words x 32 bits)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS2532EEBH-9A-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits)
EDS2532EEBH-9ATT 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range)
EDS2532EEBH-9ATT-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range)
EDS2532EESL-75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM
EDS2532EESL-75-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits SDRAM
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