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參數(shù)資料
| 型號： | EDS2532EEBH-9A |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits SDRAM (8M words x 32 bits) |
| 中文描述： | 256M位的SDRAM（800萬字× 32位） |
| 文件頁數(shù)： | 4/50頁 |
| 文件大?。?/td> | 718K |
| 代理商： | EDS2532EEBH-9A |
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EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
4
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, execute power up sequence and initialization sequence before proper device operation is achieved
(refer to the Power up sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to VDD +0.3 (
≤
2.4 max.)
V
Supply voltage relative to VSS
VDD
–0.5 to +2.4
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°
C
Storage temperature
Tstg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0
°
C to +70
°
C)
Parameter
Symbol
min.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
1.7
1.9
V
1
VSS, VSSQ
0
0
V
2
Input high voltage
VIH
0.8
×
VDD
VDD + 0.3
V
3
Input low voltage
VIL
–0.3
0.3
V
4
Notes: 1. The supply voltage with all VDD
and VDDQ pins must be on the same level.
2. The supply voltage with all VSS and VSSQ pins must be on the same level.
3. The peak of VIH = VDD + 0.5V (pulse width at VIH (max.)
≤
3ns).
4. The bottom of VIL = VSS – 1.0V (pulse width at VIL (min.)
≤
3ns).
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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