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參數(shù)資料
| 型號： | EDS2532EEBH-9A |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits SDRAM (8M words x 32 bits) |
| 中文描述： | 256M位的SDRAM（800萬字× 32位） |
| 文件頁數(shù)： | 16/50頁 |
| 文件大?。?/td> | 718K |
| 代理商： | EDS2532EEBH-9A |
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EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
16
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Read
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Continue burst read to /CAS
latency and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst read/start write
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
L
L
H
L
BA, A10
PRE, PALL
Term burst read and Precharge
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
Read with auto-
precharge
H
×
×
×
×
DESL
Continue burst to end and
precharge
Continue burst to end and
precharge
L
H
H
H
×
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
Write
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst and New write
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
3
Term burst write and Precharge*
1
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2532EEBH-9A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
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| EDS2532EESL-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2532EESL-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
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