參數(shù)資料
型號(hào)： EDS2532EEBH-9A
廠商： Elpida Memory, Inc.
英文描述： 256M bits SDRAM (8M words x 32 bits)
中文描述： 256M位的SDRAM（800萬字× 32位）
文件頁數(shù)： 15/50頁
文件大?。?/td> 718K
代理商： EDS2532EEBH-9A
EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
15
Function Truth Table
The following table shows the operations that are performed when each command is issued in each mode of the
SDRAM.
The following table assumes that CKE is high.
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Precharge
H
×
×
×
×
DESL
Enter IDLE after tRP
L
H
H
H
×
NOP
Enter IDLE after tRP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
NOP*
5
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
Idle
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
Bank and row active
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh
L
L
L
L
MODE
MRS
Mode register set*
8
L
L
L
L
MODE
EMRS
Extended mode register set*
8
Row active
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Begin read*
6
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write*
6
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
2
Precharge*
7
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
相關(guān)PDF資料
PDF描述
EDS2532EEBH-9A-E 256M bits SDRAM (8M words x 32 bits)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS2532EEBH-9A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits)
EDS2532EEBH-9ATT 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range)
EDS2532EEBH-9ATT-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range)
EDS2532EESL-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM
EDS2532EESL-75-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM
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