參數(shù)資料
型號(hào)： EDS2532EEBH-9A
廠商： Elpida Memory, Inc.
英文描述： 256M bits SDRAM (8M words x 32 bits)
中文描述： 256M位的SDRAM（800萬字× 32位）
文件頁數(shù)： 17/50頁
文件大小： 718K
代理商： EDS2532EEBH-9A
EDS2532EEBH-9A
Preliminary Data Sheet E0617E40 (Ver. 4.0)
17
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Write with auto-
precharge
H
×
×
×
×
DESL
Continue burst to end and
precharge
Continue burst to end and
precharge
L
H
H
H
×
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
3
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
Refresh (auto-refresh)
H
×
×
×
×
DESL
Enter IDLE after tRC
L
H
H
H
×
NOP
Enter IDLE after tRC
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
ILLEGAL*
4
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*
4
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
L
L
L
L
MODE
EMRS
ILLEGAL
Mode register set
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
Bank and row active*
9
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh*
9
L
L
L
L
MODE
MRS
Mode register set*
8
L
L
L
L
MODE
EMRS
Extended mode register set*
8
Extended mode register
set
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
Bank and row active*
9
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh*
9
L
L
L
L
MODE
MRS
Mode register set*
8
Remark: H: VIH. L: VIL.
×
: VIH or VIL
L
L
L
L
MODE
EMRS
Extended mode register set*
8
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