| 型號 | 廠商 | 描述 |
| smartcard 2 |
意法半導(dǎo)體 | Ordering Information For Package And Delivery |
| smbj51 2 3 4 |
5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS | |
| smbj54 2 3 4 |
5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS | |
| smbj58 2 3 4 |
5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS | |
| smbj8.5a-tr 2 3 4 5 6 |
意法半導(dǎo)體 | CMOS Hex Non-Inverting Buffer with 3-State Outputs 16-SOIC -55 to 125 |
| smbj85a-tr 2 3 4 5 6 |
意法半導(dǎo)體 | TRANSILTM |
| smbj85ca-tr 2 3 4 5 6 |
意法半導(dǎo)體 | TRANSILTM |
| smbta20 2 3 4 |
SIEMENS A G | NPN Silicon AF Transistor |
| smbta43 2 3 4 |
SIEMENS A G | NPN Silicon Transistors for High Voltages |
| smbta64 2 3 4 |
SIEMENS A G | POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82% |
| smc-e22e 2 |
10mm, 4DIGIT INDICATOR DISPLAY | |
| smc36 2 |
3.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES | |
| smc38 2 |
3.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES | |
| smce22e-gn 2 |
10mm, 4DIGIT INDICATOR DISPLAY | |
| smce30e-gn 2 |
10mm, 4DIGIT INDICATOR DISPLAY | |
| smcj8.5a-tr 2 3 4 5 |
意法半導(dǎo)體 | TRANSILTM |
| smcj8.5ca-tr 2 3 4 5 |
意法半導(dǎo)體 | TRANSILTM |
| smcj85a-tr 2 3 4 5 |
意法半導(dǎo)體 | CMOS Quad D-Type Flip-Flop 16-SOIC -55 to 125 |
| smcj85ca-tr 2 3 4 5 |
意法半導(dǎo)體 | CMOS Quad D-Type Flip-Flop 16-TSSOP -55 to 125 |
| smd100-2018 |
PolySwitch PTC Devices Overcurrent Protection Device | |
| smd84065013a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
Intersil Corporation | CMOS Programmable Interval Timer |
| smd8406501ja 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
Intersil Corporation | CMOS Programmable Interval Timer |
| smi-42 |
SMD POWER INDUCTORS | |
| smi-42-100 |
SMD POWER INDUCTORS | |
| smi-42-101 |
SMD POWER INDUCTORS | |
| smi-42-102 |
SMD POWER INDUCTORS | |
| smi-42-150 |
SMD POWER INDUCTORS | |
| smi-42-151 |
SMD POWER INDUCTORS | |
| smi-42-1r0 |
SMD POWER INDUCTORS | |
| smi-42-1r5 |
SMD POWER INDUCTORS | |
| smi-42-220 |
SMD POWER INDUCTORS | |
| smi-42-221 |
SMD POWER INDUCTORS | |
| smi-42-2r2 |
SMD POWER INDUCTORS | |
| smi-42-330 |
SMD POWER INDUCTORS | |
| smi-42-331 |
SMD POWER INDUCTORS | |
| smi-42-3r3 |
SMD POWER INDUCTORS | |
| smi-42-470 |
SMD POWER INDUCTORS | |
| smi-42-471 |
SMD POWER INDUCTORS | |
| smi-42-4r7 |
SMD POWER INDUCTORS | |
| smi-42-680 |
SMD POWER INDUCTORS | |
| smi-42-681 |
SMD POWER INDUCTORS | |
| smi-42-6r8 |
SMD POWER INDUCTORS | |
| sml100a9 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) | |
| sml100c4 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):3.6A,Rds(on):4.00Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) | |
| sml100h9 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) | |
| sml100w18 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) | |
| sml40h28 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)) | |
| sml50a15 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)) | |
| sml50a19 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)) | |
| sml40a26 2 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)(N溝道增強(qiáng)型,高電壓功率MOS場效應(yīng)管(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)) |