參數(shù)資料
型號(hào)： SML100W18
英文描述： N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
中文描述： N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：1000V的ID已（續(xù)）：17.3A，的Rds（on）：0.57Ω）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（減振鋼板基本：1000V的ID已（續(xù)）：9A條的Rds（on）：1.100Ω））
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 26K
代理商： SML100W18
SML100W18
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
Characteristic
Input Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min.
Typ.
6600
Max.
7900
Unit
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Test Conditions
(Body Diode)
Min.
Typ.
Max.
17.3
Unit
69.2
1.3
960
22
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
μ
s
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
μ
s
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
μ
C
Characteristic
Junction to Case
Min.
Typ.
Max.
0.31
Unit
40
R
θ
JC
R
θ
JA
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
pF
nC
ns
595
830
290
430
335
500
29
45
165
250
16
32
13
26
59
90
8
16
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0V , I
D
= 250
μ
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 2.5mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Min.
1000
Typ.
Max.
Unit
V
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
25
250
±100
2
4
17.3
0.570
μ
A
nA
V
A
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
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SML40A26 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω))
SML50A21 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):21A,Rds(on):0.22Ω))
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