參數(shù)資料
型號(hào)： SML100H9
英文描述： N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
中文描述： N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：1000V的ID已（續(xù)）：9A條的Rds（on）：1.100Ω）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（減振鋼板基本：1000V的ID已（續(xù)）：9A條的Rds（on）：1.100Ω））
文件頁數(shù)： 1/2頁
文件大?。?/td> 26K
代理商： SML100H9
SML100H9
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
9
36
±30
±40
200
1.6
–55 to 150
300
9
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 29.88mH, R
G
= 25
, Peak I
L
= 9A
V
DSS
I
D(cont)
R
DS(on)
1.100
1000V
9A
Faster Switching
Lower Leakage
TO–258 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (inches)
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
相關(guān)PDF資料
PDF描述
SML100W18 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
SML40H28 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω))
SML50A15 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω))
SML50A19 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω))
SML40A26 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:400V,Id(cont):25.5A,Rds(on):0.15Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SML100HB06 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH PERFORMANCE POWER SEMICONDUCTORS
SML100J19 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100J22 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100J34 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100M12MSF 功能描述:肖特基二極管與整流器 1200V NORMALLY OFF PWR SiC JFET RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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