參數(shù)資料
型號： SML100C4
英文描述： N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):3.6A,Rds(on):4.00Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
中文描述： N溝道增強模式高壓功率MOSFET（減振鋼板基本：1000V的ID已（續(xù)）：3.6A時，RDS（上）：4.00Ω）（不適用溝道增強型，高電壓功率馬鞍山場效應(yīng)管（減振鋼板基本：1000V的ID已（續(xù)）：9A條的Rds（on）：1.100Ω））
文件頁數(shù)： 2/2頁
文件大?。?/td> 20K
代理商： SML100C4
Characteristic
Drain to Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain (
“
Miller
”
) Charge
Turn
–
on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1MHz
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.8
W
Min.
Typ.
15
805
115
37
35
4.3
18
10
12
33
16
Max.
22
950
160
60
55
7
27
20
24
50
32
Unit
pF
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
=
–
I
D
[Cont.]
I
S
=
–
I
D
[Cont.] , dl
s
/ dt = 100A/μs
I
S
=
–
I
D
[Cont.] , dl
s
/ dt = 100A/μs
Min.
Typ.
Max.
3.6
14.4
1.3
580
3.3
Unit
290
1.65
I
S
I
SM
V
SD
t
rr
Q
rr
A
V
ns
μC
SOURCE
–
DRAIN DIODE RATINGS AND CHARACTERISTICS
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
pF
nC
ns
DYNAMIC CHARACTERISTICS
Characteristic
Drain
–
Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate
–
Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
GS
= 0V , I
D
= 250μA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125
°
C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
Min.
1000
Typ.
Max.
Unit
V
SML100C4
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
SML100H9 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
SML100W18 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
SML40H28 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω))
SML50A15 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω))
SML50A19 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω)(N溝道增強型,高電壓功率MOS場效應(yīng)管(Vdss:500V,Id(cont):18.5A,Rds(on):0.240Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SML100H11 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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