參數(shù)資料
型號(hào)： SMBTA43
廠商： SIEMENS A G
元件分類(lèi)： 功率晶體管
英文描述： NPN Silicon Transistors for High Voltages
中文描述： 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 137K
代理商： SMBTA43
Semiconductor Group
2
SMBTA 42
SMBTA 43
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
SMBTA 42
SMBTA 43
V
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBTA 42
SMBTA 43
V
(BR)CE0
300
200
–
–
–
–
nA
nA
μ
A
μ
A
nA
Collector-base cutoff current
V
CB
= 200 V
V
CB
= 160 V
V
CB
= 200 V,
T
A
= 150 C
V
CB
= 160 V,
T
A
= 150 C
Emitter-base cutoff current
V
EB
= 3 V
SMBTA 42
SMBTA 43
SMBTA 42
SMBTA 43
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 100
μ
A
V
(BR)EB0
6
–
–
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
SMBTA 42
SMBTA 43
V
CEsat
–
–
–
–
–
–
0.5
0.4
0.9
–
h
FE
25
40
40
40
–
–
–
–
–
–
–
–
MHz
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 20 V,
f
= 1 MHz
f
T
50
–
–
AC characteristics
pF
SMBTA 42
SMBTA 43
C
obo
–
–
–
–
3
4
Collector-base breakdown voltage
I
C
= 100
μ
A
SMBTA 42
SMBTA 43
V
(BR)CB0
300
200
–
–
–
–
I
EB0
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
1)
Pulse test conditions:
t
≤
300
μ
s,
D
= 2 %.
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