參數(shù)資料
型號： COP8CCR9LVA8
廠商： National Semiconductor
文件頁數(shù)： 16/111頁
文件大?。?/td> 0K
描述： IC MCU EEPROM 8BIT 68-PLCC
標準包裝： 18
系列： COP8™ 8C
核心處理器： COP8
芯體尺寸： 8-位
速度： 20MHz
連通性： Microwire/Plus（SPI），UART/USART
外圍設備： 欠壓檢測/復位，POR，PWM，WDT
輸入/輸出數(shù)： 59
程序存儲器容量： 32KB（32K x 8）
程序存儲器類型： 閃存
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 16x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 68-LCC（J 形引線）
包裝： 管件
其它名稱： *COP8CCR9LVA8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
Electrical Characteristics DC Electrical Characteristics (
40°C ≤ TA ≤ +85°C) (continued)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Supply Current for BOR Feature
VCC = 5.5V
45
μA
4.28
High Brownout Trip Level (BOR Enabled)
4.17
4.5
V
Low Brownout Trip Level (BOR Enabled)
2.7
2.78
2.9
V
Input Levels (VIH, VIL)
Logic High
0.8 VCC
V
Logic Low
0.16 VCC
V
Internal Bias Resistor for the CKI
0.3
1.0
2.5
M
Crystal/Resonator Oscillator
Hi-Z Input Leakage
VCC = 5.5V
0.5
+0.5
μA
Input Pullup Current
VCC = 5.5V, VIN = 0V
50
210
μA
Port Input Hysteresis
0.25 VCC
V
Output Current Levels
D Outputs
Source
VCC = 4.5V, VOH = 3.8V
7
mA
VCC = 2.7V, VOH = 1.8V
4
mA
Sink(4)
VCC = 4.5V, VOL = 1.0V
10
mA
VCC = 2.7V, VOL = 0.4V
3.5
mA
All Others
Source (Weak Pull-Up Mode)
VCC = 4.5V, VOH = 3.8V
10
μA
VCC = 2.7V, VOH = 1.8V
5
μA
Source (Push-Pull Mode)
VCC = 4.5V, VOH = 3.8V
7
mA
VCC = 2.7V, VOH = 1.8V
4
mA
Sink (Push-Pull Mode)(4)
VCC = 4.5V, VOL = 1.0V
10
mA
VCC = 2.7V, VOL = 0.4V
3.5
mA
TRI-STATE Leakage
VCC = 5.5V
0.5
+0.5
μA
Allowable Sink Current per Pin
15
mA
Maximum Input Current without Latchup(5)
±200
mA
RAM Retention Voltage, VR (in HALT Mode)
2.0
V
Input Capacitance
7
pF
Load Capacitance on D2
1000
pF
Voltage on G6 to Force Execution from Boot ROM(6)
G6 rise time must be slower than
2 x VCC
VCC + 7
V
100 ns
G6 Rise Time to Force Execution from Boot ROM
100
nS
Input Current on G6 when Input > VCC
VIN = 11V, VCC = 5.5V
500
μA
Flash Memory Data Retention
25°C
100
yrs
Flash Memory Number of Erase/Write Cycles
SeeTable 5-12, Typical Flash
105
cycles
Memory Endurance
(4)
Absolute Maximum Ratings should not be exceeded.
(5)
Pins G6 and RESET are designed with a high voltage input network. These pins allow input voltages > VCC and the pins will have sink
current to VCC when biased at voltages > VCC (the pins do not have source current when biased at a voltage below VCC). These two
pins will not latch up. The voltage at the pins must be limited to < 14V. WARNING: Voltages in excess of 14V will cause damage to the
pins. This warning excludes ESD transients.
(6)
Vcc must be valid and stable before G6 is raised to a high voltage.
12
Electrical Specifications
Copyright 2000–2013, Texas Instruments Incorporated
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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