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參數(shù)資料
| 型號(hào)： | CE5038 |
| 廠商： | Intel Corp. |
| 英文描述： | DVB-S2 Advanced Modulation Satellite Tuner |
| 中文描述： | DVB - S2的先進(jìn)調(diào)制衛(wèi)星調(diào)諧器 |
| 文件頁數(shù)： | 36/41頁 |
| 文件大小： | 463K |
| 代理商： | CE5038 |
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CE5038
Data Sheet
35
Intel Corporation
6.0 Electrical Characteristics
6.1 Test Conditions
The following conditions apply to all figures in this chapter, except where notes indicate other settings.
Tamb = -10° to 70°C, Vee= 0 V, All Vcc supplies = 5 V±5%
RF gain adjust = +0 dB, prefilter = +4.2 dB and postfilter = 4.2 dB. RFG=0, BA1=0, BA0=1, BG1=0, BG0=1
These characteristics are guaranteed by either production test or design. They apply within the specified ambient
temperature and supply voltage unless otherwise stated.
6.2 Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Notes
Supply voltage
VccBB, VccDIG, VccLO,
VccRF, VccTUNE
-0.3
5.5
V
w.r.t. Vee
Storage temperature
T
STG
T
j
-55
150
°C
Junction temperature
125
°C
Voltage on SDA & SCL
-0.3
6
V
Vcc = Vee to 5.25 V
Voltage on DRIVE
-0.3
VccTUNE+0.3
V
Voltage on RFIN, RFBYPASS
and inverted equivalents
-0.3
VccRF+0.3
V
Voltage on RFAGC
Voltage on Vvar
-0.3
VccLO+0.3
V
Voltage on LOTEST
Voltage on IOUT, QOUT, IDC,
QDC and inverted
equivalents
-0.3
VccBB+0.3
V
Voltage on P1
Voltage at DIGDEC
-0.3
3.6
V
Voltage on PUMP
-0.3
VccDIG+0.3
V
Voltage on SLEEP and P0
Voltage on ADD, XTAL,
XTALCAP and LOCK
-0.3
DIGDEC+0.3
V
Sink current, P0 or P1
20
mA
Each output
ESD protection, pins 31 &
32
1
1. ESD protection can be increased by adding a protection diode (D1) to the input circuit as shown in the application circuit (Figure 2).
0.5
kV
To Mil-std 883B
method 3015 cat1
pins 1-30, 33-40
2.0
kV
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