- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385200 > BUK664R4-55C (NXP SEMICONDUCTORS) N-channel TrenchMOS intermediate level FET PDF資料下載
參數(shù)資料
| 型號： | BUK664R4-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 216K |
| 代理商： | BUK664R4-55C |
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 21 December 2010
9 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
003aac337
0
1
2
3
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
003aab271
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
003aaf017
0
10
20
30
40
0
20
40
60
I
D
(A)
R
DSon
(m
Ω
)
4.5
4.0
10.0
3.6
3.0
3.4
V
GS
(V) = 3.5
3.8
3.2
003aae855
0
4
8
12
16
0
50
100
150
200
I
D
(A)
R
DSon
(m
Ω
)
6.0
4.5
10.0
3.8
V
GS
(V) =
5.0
4.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK664R6-40C | N-channel TrenchMOS intermediate level FET |
| BUK664R8-75C | N-channel TrenchMOS FET |
| BUK6C1R5-40C | N-channel TrenchMOS intermediate level FET |
| BUK6E2R0-30C | N-channel TrenchMOS intermediate level FET |
| BUK6E2R3-40C | N-channel TrenchMOS intermediate level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK664R4-55C,118 | 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK664R6-40C | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V80ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,80A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK |
| BUK664R6-40C,118 | 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK664R8-75C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404 |
| BUK664R8-75C,118 | 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。