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參數資料
| 型號： | BUK664R4-55C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 3/16頁 |
| 文件大小： | 216K |
| 代理商： | BUK664R4-55C |
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 21 December 2010
3 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
-16 V accumulated duration not to exceed 168 hrs.
[2]
Accumulated pulse duration not to exceed 5 mins.
[3]
Continuous current is limited by package.
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; pulsed; t
p
≤
10 μs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-16
-20
-
-
-
Max
55
16
20
100
97
550
Unit
V
V
V
A
A
A
[1]
[2]
I
D
drain current
[3]
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
Avalanche ruggedness
E
DS(AL)S
total power dissipation
storage temperature
junction temperature
-
-55
-55
204
175
175
W
°C
°C
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤
10 μs; T
mb
= 25 °C
[3]
-
-
100
550
A
A
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; T
j(init)
= 25 °C
-
263
mJ
E
DS(AL)R
[4][5][6]
-
-
J
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| BUK664R4-55C,118 | 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK664R6-40C | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V80ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,80A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK |
| BUK664R6-40C,118 | 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK664R8-75C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404 |
| BUK664R8-75C,118 | 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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