參數(shù)資料
型號： BUK664R4-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 100 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 7/16頁
文件大?。?/td> 216K
代理商： BUK664R4-55C
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 21 December 2010
7 of 16
NXP Semiconductors
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 18
; see
Figure 17
-
-
-
-
-
-
-
-
-
-
19
31.5
5800
550
380
25
65
252
116
7.5
-
-
7750
660
520
-
-
-
-
-
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 19
V
DS
= 45 V; R
L
= 1.8
; V
GS
= 10 V;
R
G(ext)
= 10
from source lead to source bond
pad ; T
j
= 25 °C
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
L
S
internal source inductance
-
3.5
-
nH
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 20
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= 0 V; V
DS
= 25 V
-
0.83
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
55
112
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
T
j
= 25°C; V
DS
= 25 V
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae708
0
40
80
120
160
0
20
40
60
80
I
D
(A)
g
fs
(S)
003aae852
0
50
100
150
200
250
I
D
(A)
0
0.5
1
1.5
2
V
DS
(V)
3.8
4.0
4.5
5.0
6.0
3.2
V
GS
(V) = 10
3.4
3.6
相關(guān)PDF資料
PDF描述
BUK664R6-40C N-channel TrenchMOS intermediate level FET
BUK664R8-75C N-channel TrenchMOS FET
BUK6C1R5-40C N-channel TrenchMOS intermediate level FET
BUK6E2R0-30C N-channel TrenchMOS intermediate level FET
BUK6E2R3-40C N-channel TrenchMOS intermediate level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK664R4-55C,118 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R6-40C 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V80ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,80A,SOT404 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R8-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404
BUK664R8-75C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*